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Samsung Semiconductor Global
semiconductor.samsung.com > news-events > tech-blog > fms-2026-3d-nand-innovation-award-v10-bv-nand-pushing-the-boundaries-of-ai-storage-beyond-400-layers

[FMS 2026 3D & NAND Innovation Award] V10 BV-NAND: Pushing the Boundaries of AI Storage Beyond 400 Layers

2+ week, 17+ hour ago   (1589+ words) What market shifts and evolving customer needs inspired V10, and what technical challenges did the team overcome to bring it to life? We spoke with Byoung-Hee Kim and Jiyeon Shin from Product Planning, and Sangsoo Park and Dawoon Jeong from Development…...

Google News
semiconductor.samsung.com > news-events > tech-blog > memory-innovation-powering-a-new-ai-infrastructure-cycle-ep1

Memory Innovation Powering a New AI Infrastructure Cycle Part 1 | Samsung Semiconductor Global

3+ week, 5+ day ago   (1218+ words) Today, AI is rapidly expanding beyond large-scale data centers into smartphones, AI PCs, vehicles, robots, and industrial environments. As cloud AI and edge AI divide roles based on their respective strengths and grow together, a new AI infrastructure cycle is…...